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MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS12014-A
FLAT-BASE TYPE
INSULATED TYPE
TOTAL SYSTEM
Symbol
T j
T stg
T C
V ISO
—
Item
Junction temperature
Storage temperature
Module case operating temperature
Isolation voltage
Mounting torque
Condition
(Note 2)
—
(Fig. 3)
60 Hz sinusoidal AC for 1 minute, between all terminals
and base plate.
Mounting screw: M3.5
Ratings
–20 ~ +125
–40 ~ +125
–20 ~ +100
2500
0.78 ~ 1.27
Unit
° C
° C
° C
Vrms
N·m
Note 2) : The item defines the maximum junction temperature for the power elements (IGBT/Diode) of the ASIPM to ensure safe operation.
However, these power elements can endure instantaneous junction temperature as high as 150 ° C. To make use of this additional
temperature allowance, a detailed study of the exact application conditions is required and, accordingly, necessary information is
to be provided before use.
CASE TEMPERATURE MEASUREMENT POINT (3mm from the base surface)
T C
(Fig. 3)
THERMAL RESISTANCE
Symbol
R th(jc ) Q
R th(jc)F
R th(jc ) QB
R th(jc)FB
R th(c-f)
Item
Junction to case Thermal
Resistance
Contact Thermal Resistance
Condition
Inverter IGBT (1/6)
Inverter FWDi (1/6)
Brake IGBT
Brake FWDi
Case to fin, thermal grease applied (1 Module)
Min.
—
—
—
—
—
Ratings
Typ.
—
—
—
—
—
Max.
2.0
5.5
3.0
7.3
0.040
Unit
° C/W
° C/W
° C/W
° C/W
° C/W
ELECTRICAL CHARACTERISTICS (Tj = 25 ° C, V DH = 15V , V DB = 15V, V DL = 5V unless otherwise noted)
Symbol
V CE(sat)
V EC
V CE(sat)Br
V FBr
ton
tc(on)
toff
tc(off)
trr
Item
Collector-emitter saturation
voltage
FWDi forward voltage
Brake IGBT
Collector-emitter saturation voltage
Brake diode forward voltage
Switching times
FWD reverse recovery time
Condition
V DL = 5V, V DH = V DB = 15V Input = ON,
Tj = 25 ° C, Ic = 10A
Tj = 25 ° C, Ic = –10A, Input = OFF
V DL = 5V, V DH = 15V Input = ON, Tj = 25 ° C, Ic = 5A
Tj = 25 ° C, I F = 5A, Input = OFF
1/2 Bridge inductive, Input = ON
V CC = 600V, Ic = 10A, Tj = 125 ° C
V DL = 5V, V DH = 15V, V DB = 15V
Note : ton, toff include delay time of the internal control
circuit.
Min.
—
—
—
—
0.3
—
—
—
—
Ratings
Typ.
—
—
—
—
1.2
0.5
2.2
0.9
0.2
Max.
3.6
3.5
3.6
3.5
2.0
1.4
4.0
1.6
—
Unit
V
V
V
V
μ s
μ s
μ s
μ s
μ s
13.5V ≤ V DH = V DB = ≤ 16.5V
Short circuit endurance V CC ≤ 800V, Input = ON (One-Shot)
(Output, Arm, and Load, Short Tj = 125 ° C start
Circuit Modes)
V CC ≤ 800V, Tj ≤ 125 ° C,
? No destruction
? F O output by protection operation
? No destruction
Switching SOA
Ic < I OL (CL) operation level, Input = ON,
13.5V ≤ V DH = V DB = ≤ 16.5V
? No protecting operation
? No F O output
I DH
I DL
V th(on)
V th(off)
R i
V DH Circuit Current
V DL Circuit Current
Input on threshold voltage
Input off threshold voltage
Input pull-up resistor
V DL = 5V, V DH = 15V, V CIN = 5V
V DL = 5V, V DH = 15V, V CIN = 5V
Integrated between input terminal-V DH
—
—
0.8
2.5
—
—
—
1.4
3.0
150
150
50
2.0
4.0
—
mA
mA
V
V
k ?
Jan. 2000
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